Publications - Materials Science



2016

  1. P. Yew, S.C. Lee, S.S. Ng, H. Abu Hassan, W.L. Chend, T. Osipowicz, M.Q. Ren, Infrared optical responses of wurtzite InxGa1-xN thin films with porous surface morphology,Thin Solid Films 603 (2016) 334-341

2014

  1. V.R. D'Costa, W. Wang, Q. Zhou, T.K. Chan, T. Osipowicz, E.S. Tok and Y.C. Yeo, Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys,Journal of Applied Physics 116 (2014) 053520

  2. T.K. Chan, S.Y. Koh, V. Fang, A. Markwitz, and T. Osipowicz, Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: the complete picture, Applied Surface Science 314 (2014) 322 - 330

  3. N. Manikanthababu, T.K. Chan, A.P. Pathak, G. Devaraju, N. Srinivasa Rao, P. Yang, M.B.H. Breese, T. Osipowicz, and S.V.S. Nageswara Rao, Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon, Nuclear Instruments and Methods in Physics Research B 332 (2014) 389 - 392

  4. Q. Zhou, T.K. Chan, S.L. Lim, C. Zhan, T Osipowicz, X. Gong, E.S. Tok and Y.C. Yeo, Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy, ECS Solid State Letters 3 No. 8 (2014) P91 - P93

  5. U.B. Singh, D.C. Agarwal, S.A. Khan, S. Mohapatra, H. Amekura, D. P. Datta, A. Kumar, R.K. Choudhury, T. K. Chan, T. Osipowicz and D.K. Avasthi, Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering, Beilstein Journal of Nanotechnoly 5 (2014) 105-110

  6. V.R. D'Costa, L. Wang, W. Wang, S.L. Lim, T.K. Chan, L.H. Chua, T. Henry, W. Zou, C. Hatem, T. Osipowicz, E.S. Tok and Y.C. Yeo, Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study, Applied Physics Letters 105, 122108 (2014)

2013

  1. S. Mathew, A. Annadi, T.K. Chan, T.C. Asmara, D. Zhan, X.R. Wang, S. Azimi, Z. Shen, A. Rusydi, Ariando, M.B.H. Breese and T. Venkatesan, Tuning the Interface Conductivity of LaAlO3 / SrTiO3 Using Ion Beams: Implications for Patterning, ACS Nano 7 (2013) 10572-10581

2012

  1. A. Markwitz, D.A. Carder, T. Hopf, J. Kennedy, T.K. Chan, A. Mucklich, T. Osipowicz, Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb+ and Se+ ion implantation into SiO2,Nuclear Instruments & Methods in Physics Research B 273 (2012) 199-202

  2. G. Devaraju, S. V.S. Nageswara Rao, N. Srinivasa Rao, V. Saikiran, T. K. Chan, T. Osipowicz, M. B.H. Breese and A. P. Pathak, Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation,Radiation Effects and Defects in Solids 167 (2012) 506-511

  3. T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz, Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high resolution Rutherford backscattering spectrometry,Applied Physics Letters 101 (2012) 081602

  4. S. Mathew, K. Gopinadhan, T. K. Chan, X. J. Yu, D. Zhan, L. Cao, A. Rusydi, M. B. H. Breese, S. Dhar, Z. X. Shen, T. Venkatesan, and John T. L. Thong, Magnetism in MoS2 induced by proton irradiation, Applied Physics Letters 101 (2012) 102103

2011

  1. S. Mathew, T.K. Chan, D. Zhan, K. Gopinadhan, A.-R. Barman, M.B.H. Breese, S. Dhar, Z.X. Shen, T. Venkatesan, John T.L. Thong, The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation, Carbon 49 (2011) 1720-1726

  2. Jamie S. Laird, Jamie Wilkinson, Chris Ryan, Andrew Bettiol, Hyperspectral Ionoluminescence System for Minerals and Fluid Inclusions, Nuclear Instruments & Methods in Physics Research B 269 (2011) 2244-2250

  3. S. Mathew, T. K. Chan, D. Zhan, K. Gopinadhan, A. Roy Barman, M. B. H. Breese, S. Dhar, Z. X. Shen, T. Venkatesan, and John T. L. Thong, Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study, J. Appl. Phys. 110 (2011) 084309.

  4. C. Rangasami, P. Malar, T. Osipowicz, M.K. Jain and , S. Kasiviswanathan, Structure of melt-quenched AgIn3Te5, Powder Diffraction 26 (3), (Sep 2011) pp. 248-255.

  5. P.P. Murmu, R.J Mendelsberg, J. Kennedy, D.A. Carder, B. Ruck, A. Markwitz, R.J. Reeves, P. Malar and T. Osipowicz, Structural and photoluminescence properties of Gd implanted ZnO single crystals, Journal of Applied Physics 110, Issue 3, (Aug. 2011) 033534.

  6. G.H. Wang, T.C. Wong, X.C. Wang, H.Y. Zheng, T.K. Chan, T. Osipowicz, Y.L. Foo YL and S. Tripathy, Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation, Japanese Journal of Applied Physics, Volume: 50 Issue: 4 (Apr 2011) 04DF06.

  7. Siva Krishna Karuturi, Lijun Liu, Liap Tat Su, Alongkarn Chutinan, Nazir P. Kherani, Taw Kuei Chan, Thomas Osipowicz and Alfred Iing Yoong Tok, Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals, Nanoscale, 2011, Advance Article

2010

  1. Phyllis S. Y. Lim, D.Z. Chi, P.C. Lim, X.C. Wang, T.K. Chan, T. Osipowicz and Y.C. Yeo, Formation of epitaxial meta-stable NiGe2 thin film on Ge (100) by pulsed excimer laser anneal, Applied Physics Letters 97, 182104, 2010.

2009

  1. M. Y. Chan, T. K. Chan, T. Osipowicz, L. Chan and P. S. Lee, Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties, Appl. Phys. Lett. 95 (2009) 113113

  2. Das, B., Reddy, M. V., Malar, P. Osipowicz, Thomas, Rao, G. V. Subba, Chowdari, B. V. R.,Nanoflake CoN as a high capacity anode for Li-ion batteries, SOLID STATE IONICS, 180(17-19), 1061-1068, (Jul 2009)

  3. Bhaskar Chandra Mohanty, P. Malar, Thomas Osipowicz, B. S. Murty, Shikha Varmad and S. Kasiviswanathana, Characterization of silver selenide thin films grown on Cr-covered Si substrates, Surf. Interface Anal. (Mar 2009) 41, 170-178

2008

  1. J.K. Tripath, Dileep Kumar, P. Malar, T. Osipowicz , V. Ganesan, A. Gupta, T. Som, Effect of Ion Beam Irradiation on Magnetic and Structural Properties of Pt/Cr/Co Multilayers, Nuclear Instruments and Methods in Physics Research B 266 (Dec 2007) 1247-1251

  2. S.R. Sarath Kumar, P. Malar, Thomas Osipowicz, S.S. Banerjee, S. Kasiviswanathan, Ion Beam Studies on Reactive DC Sputtered Manganese Doped Indium Tin Oxide Thin Films, Nuclear Instruments and Methods in Physics Research B 266 (Dec 2007) 1421-1424

  3. J. J. Qiu, G. C. Han, W. K. Yeo, P. Luo, Z. B. Guo, and T. Osipowicz, Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2MnAl, Journal of Applied Physics 103, 07A903 (Jan2008)

  4. P. Malar, T.K. Chan, C.S. Ho, T. Osipowicz, HRBS/Channeling Studies of Ultra-Thin ITO Films on Si, Nuclear Instruments and Methods in Physics Research B 266 (Nov 2008) 1464-1467

  5. T.K. Chan, P. Darmawan, C.S. Ho , P. Malar, P.S. Lee, T. Osipowicz , Interface Strain Study of Thin Lu2O3/Si using HRBS, Nuclear Instruments and Methods in Physics Research B 266 (Jan 2008) 1486-1489

  6. Gregory K. L. Goh, Kelvin Y. S. Chan, Barnabas S. K. Tan, Y. W. Zhang, J. H. Kim, and Thomas Osipowicz, Low-Temperature Epitaxy of KTaO3 and KNbO3 Films, Journal of The Electrochemical Society, 155, 1 (Jan 2008)

  7. Darmawan, P.,Chan, M. Y., Zhang, T., Setiawan, Y., Seng, H. L., Chan, T. K., Osipowicz, T., Lee, P. S., Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices, Applied Physics Letters, 93 (6), 062901 (Aug 2008)

  8. Ho CS, Liew SL, Chan TK, Malar P, Osipowicz T, Lu L and Lim CYH, Quantitative studies of copper diffusion through ultra-thin ALD tantalum nitride barrier films by high resolution-RBS, 24th Advanced Metallization Conference 2007 (AMC), OCT 09-11, 2007 Albany, NY (MRS SOCIETY CONFERENCE PROCEEDINGS, 23, 95-99, 2008).

2007

  1. Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Sudhiranjan Tripathy, Thomas Osipowicz, Taw Kuei Chan, Keat-Mun Hoe, Subramaniam Balakumar, Guo-Qiang Lo, Ganesh Samudra and Yee-Chia Yeo, Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing, Applied Physics Letters 91, 202105 (2007)

  2. Darmawan, P. Lee, P.S.; Setiawan, Y.; Ma, J.; Osipowicz, T., "Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric, Applied Physics Letters, v 91, n 9, 2007, p 092903

  3. Ho, Charles K.F. Rajni; Djie, H.S.; Pita, Kantisara; Ngo, Nam Quoc; Osipowicz,T, Optical and physical properties of solgel-derived GeO2:SiO 2 films in photonic applications, Applied Optics, v 46, n 20, Jul 10, 2007, p 4397-4406

  4. Sreenivasan, M.G., Teo, K.L.; Cheng, X.Z.; Jalil, M.B.A.; Liew, T.; Chong, T.C.; Du, A.Y.; Chan, T.K.; Osipowicz, T.,Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te system, Journal of Applied Physics, v 102, n 5, 2007, p 053702

  5. H. L. Zhou, S. J. Chua, H. Pan, Y. W. Zhu, T. Osipowicz, W. Liu, K. Y. Zang, Y. P. Feng, and C. H. Sow, Morphology Controllable ZnO Growth on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates, J. Phys. Chem. C 2007, 111, 6405-6410

  6. Hailong Zhou, Hui Pan, Taw Kuei Chan, Chee Sheng Ho, Yanping Feng, Soo-Jin Chua and Thomas Osipowicz, Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films, Nuclear Instruments & Methods in Physics Research B 260 (2007) 299-303

  7. M. Cholewa, H. O. Moser, Lie Huang, Shu Ping Lau, Jinkyoung Yoo, Sung Jin An, Gyu-Chul Yi, Gao Xingyu, A. T. S. Wee, A. Bettiol, F. Watt, B. Fischer, Secondary electron emission properties of III-nitride/ZnO coaxial heterostructures under ion and X-ray bombardment, Nuclear Instruments & Methods in Physics Research B 254 (2007) 55-58

  8. Hailong Zhou, S.J. Chua, Keyan Zang, L.S. Wang, S. Tripathy, N. Yakovlev, Osipowicz Thomas, InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization, Journal of Crystal Growth 298 (2007) 511-514

2006

  1. T.D.M. Weijers-Dall, H. Timmers, K. Stenstrom, P. Persson, A. Pergjegjaj, X. Wang, M. Graczyk, T. Osipowicz, M.Q. Ren, D.J. O Connor, H.J. Whitlow, Measurements of the stopping forces for heavy ions in Ge, Ag and Au using novel 'polka-dot' detectors, Nuclear Instruments and Methods in Physics Research, Section B251 (2006) 352-360

  2. S.L. Liew, B. Balakrisnan, S.Y. Chow, M.Y. Lai, W.D. Wang, K.Y. Lee, C.S. Ho, T. Osipowicz and D.Z. Chi, Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing, Thin Solid Films 504 (2006) 81-85

  3. Li HL, Wu YH, Liu T, Wang SJ, Guo ZB, Osipowicz T, Magnetic and transport properties of Ge: Mn granular system, Thin Solid Films 505 (2006) 54-56

  4. Ahmed A, Al-Ohali M, Garwan M, Al-Hamouz Z, Al-Soufi K, Minqin R, Rajta I, Watt F, A systematic approach to nuclear microscopy of water trees for a large number of field-aged HV cable samples, European Transactions on Electrical Power 16 (2006) 49-62

2005

  1. Zhang QC, Wu N, Osipowicz T, Bera LK, Zhu CX, Formation and thermal stability of nickel germanide on germanium substrate, Japanese Journal of Applied Physics Part 2-Letters & Express Letters 44 (2005) L1389-L1391

  2. Rahman MA, Osipowicz T, Chi DZ, Wang WD, Observation of a new kinetics to form Ni3Si2 and Ni31Si12 silicides at low temperature (200 degrees C), Journal of the Electrochemical Society 152 (2005) G900-G902

  3. Rahman MA, Osipowicz T, Pey KL, Jin LJ, Choi WK, Chi DZ, Antoniadis DA, Fitzgerald EA, Isaacson DM, Suppression of oxidation in nickel germanosilicides by Pt incorporation, Appied Phsyics Letters 87 (2005) 82116-82116

  4. Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Rahman MA, Osipowicz T, Tung CH, Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide, Journal of Applied Physics 98 (2005) 33520-33520

  5. Seng HL, Osipowicz T, Zhang J, Tok ES, Observation of local lattice tilts in strain-relaxed Si1-xGex using high resolution channeling contrast microscopy, Applied Physics A: Materials Science & Processing81 (2005) 1163-1166

  6. Zhu YQ, Kang ET, Neoh KG, Osipowicz T, Chan L, Plasma graft copolymerization of 4-vinylpyridine on dense and porous SiLK for electroless plating of copper and for retardation of copper diffusion,Journal of the Electrochemical Society 152 (2005): F107-F114

  7. Anisur MR, Osipowicz T, Chi DZ, Wang WD, Effects of prolonged annealing on NiSi at low temperature (500 degrees C), Journal of Electronic Materials 34 (2005) 1110-1114

  8. Lee PS, Pey KL, Mangelinck D, Chi DZ, Osipowicz T, On the morphological changes of Ni- and Ni(Pt)-silicides , Journal of the Electrochemical Society 152 (2005) G305-G308

  9. L. Huang, M.B.H. Breese, E.J. Teo, Characterisation of 60 misfit dislocations in SiGe alloy using nuclear microscopy, Nuclear Instruments and Methods in Physics Research B 231 (2005) 452-456

  10. H.L. Seng, T. Osipowicz, J. Zhang b, E.S. Tok, F. Watt, Determination of local lattice tilt in Si1 xGex virtual substrate using high resolution channeling contrast microscopy, Nuclear Instruments and Methods in Physics Research B 231 (2005) 446-451

2004

  1. Zmeck, M.; Balk, L. J.; Osipowicz, T.; Watt, F.; Phang, J. C. H.; Khambadkone, A. M.; Niedernostheide, F.-J.; Schulze, H.-J., Ion beam induced charge microscopy studies of power diodes., Journal of Physics: Condensed Matter (2004), 16(2), S57-S66.

  2. Seng, H. L.; Breese, M. B. H.; Watt, F.; Kummer, M.; von Kanel, H.,Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition, Nuclear Instruments & Methods in Physics Research, B (2004), 215(1-2), 235-239.

  3. Chong, K. B.; Kong, L. B.; Chen, Linfeng; Yan, L.; Tan, C. Y.; Yang, T.; Ong, C. K.; Osipowicz, T., Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices, Journal of Applied Physics (2004), 95(3), 1416-1419.

  4. Zhao, F. F.; Zheng, J. Z.; Shen, Z. X.; Osipowicz, T.; Gao, W. Z.; Chan, L. H., Thermal stability study of NiSi and NiSi2 thin films, Microelectronic Engineering (2004), 71(1), 104-111.

  5. Christian M. Leewis, Peter H. A. Mutsaers, Arthur M. de Jong, Leo J. van IJzendoorn, Martien J. A. de Voigt, Min Q. Ren, Frank Watt and Dirk J. Broer, The mutual diffusion coefficient for methacrylate monomers as determined with a nuclear microprobe, Journal of Chemical Physics 120 (2004)

  6. E. J. Teo, A.A. Bettiol, T. Osipowicz, M. Hao, S.J. Chua and Y.Y. Liu, Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence, Journal of Crystal Growth 268 (2004) 494-498

  7. Yan, L. ; Kong, L.B.; Yang, T.; Goh, W.C.; Tan, C.Y.; Ong, C.K.; Rahman, Md.A.; Osipowicz, T.; Ren, M.Q. Enhanced low field magnetoresistance of Al2O3-La0.7Sr0.3MnO3 composite thin films via a pulsed laser deposition, Journal of Applied Physics, Volume 96, Issue 3, 2004, Pages 1568-1571

  8. Chen, C. ; Teo, K.L.; Chong, T.C.; Wu, Y.H.; Osipowicz, T.; Rahman, M.A . Epitaxial growth of co-doped Eu and Sm in -Zn0.05Sr0.95S on (001)MgO substrate using -MnS buffer layer, Journal of Crystal Growth, Volume 264, Issue 1-3, 2004, Pages 58-63

  9. Pey, K.L. ; Chattopadhyay, S.; Choi, W.K.; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T., Stability and composition of Ni-germanosilicided Si1-xGex films, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Volume 22, Issue 2, 2004, Pages 852-858

  10. Rana, M.A., Breese, M.B.H.; Osipowicz, T. A Monte Carlo simulation study of channelling and dechannelling enhancement due to lattice translations, Nuclear Instruments and Methods in Physics Research, B: 222, n 1-2, July, 2004, p 53-60

  11. Song, W.D., Hong, M.H.; Osipowicz, T.; Dai, D.Y.; Pang, S.I.; Peng, Y.Z.; Chong, J.F.; An, C.W.; Liew, Y.F.; Chong, T.C. , Laser synthesis of new materials, Applied Physics A: Materials Science and Processing, v 79, 2004, Laser Ablation, p 1349-1352

  12. Nakajima, K., Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T.; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C. Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy, Applied Surface Science, v 237, n 1-4, Oct 15, 2004, p 416-420

  13. P. J. Sellin, A. Lohstroh, A. Simon and M. B. H. Breese, Digital IBIC - new spectroscopic modalities for ion-beam-induced charge imaging, Nuclear Instruments and Methods in Physics Research A 521 (2004) 600-607

  14. Yan, L. Chen, L.F.; Tan, C.Y.; Ong, C.K.; Rahman, Md. Anisur; Osipowicz, T. Ba0.1Sr0.9TiO3-BaTi4O 9 composite thin films with improved microwave dielectric properties, European Physical Journal B, v 41, n 2, September, 2004, p 201-205

  15. Seah, M.P. Spencer, S.J.; Bensebaa, F.; Vickridge, I.; Danzebrink, H.; Krumrey, M.; Gross, T.; Oesterle, W.; Wendler, E.; Rheinlander, B.; Azuma, Y.; Kojima, I.; Suzuki, N.; Suzuki, M.; Tanuma, S.; Moon, D.W.; Lee, H.J.; Cho, Hyun Mo; Chen, H.Y.; Wee, A.T.S.; Osipowicz, T.; Pan, J.S.; Jordaan, W.A.; Hauert, R.; Klotz, U.; Van Der Marel, C.; Verheijen, M.; Tamminga, Y.; Jeynes, C.; Bailey, P.; Biswas, S.; Falke, U.; Nguyen, N.V.; Chandler-Horowitz, D.; Ehrstein, J.R.; Muller, D.; Dura, J.A. Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study, Surface and Interface Analysis, v 36, n 9, September, 2004, p 1269-1303

2003

  1. Zmeck, M.; Balk, L.; Osipowicz, T.; Watt, F.; Phang, J.; Khambadkone, A.; Niedernostheide, F.-J.; Schulze, H.-J., Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy., Nuclear Instruments & Methods in Physics Research B210 (2003) 164-168.

  2. Rana, M. A.; Osipowicz, T.; Choi, H. W.; Breese, M. B. H.; Chua, S. J., A study of the material loss and other processes involved during annealing of GaN at growth temperatures, Chemical Physics Letters (2003), 380(1,2), 105-110.

  3. Osipowicz, T.; Teo, E. J.; Bettiol, A. A.; Watt, F.; Hao, M. S.; Chua, S. J., 2 MeV proton channeling contrast microscopy of lateral epitaxial overgrowth GaN thin film structures., Thin Solid Films (2003), 424(1), 139-142.

  4. Teo, E. J.; Bettiol, A. A.; Osipowicz, T.; Hao, M. S.; Chua, S. J.; Liu, Y. Y., Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence., Materials Research Society Symposium Proceedings (2003), 738(Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures), 85-90.

  5. Rana, M. A.; Osipowicz, T.; Choi, H. W.; Breese, M. B. H.; Watt, F.; Chua, S. J. Stoichiometric and structural alterations in GaN thin films during annealling.Applied Physics A: Materials Science & Processing (2003), 77(1), 103-108.

  6. Choi, H. W.; Cheong, M. G.; Rana, M. A.; Chua, S. J.; Osipowicz, T.; Pan, J. S. Rutherford backscattering analysis of GaN decomposition. Journal of Vacuum Science & Technology, B: (2003), 21(3), 1080-1083.

  7. Rana, M. A.; Choi, H. W.; Breese, M. B. H.; Osipowicz, T.; Chua, S. J.; Watt, F. A study of the decomposition of GaN during annealing over a wide range of temperatures. Materials Research Society Symposium Proceedings (2003), 743(GaN and Related Alloys--2002), 731-736.

  8. Nakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T.; Tok, K. L.; Zheng, J. Z.; See, A.; Zhang, B. C., Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters (2003), 83(2), 296-298.

  9. Seng, H. L.; Osipowicz, T.; Sum, T. C.; Breese, M. B. H.; Watt, F.; Tok, E. S.; Zhang, J., High-resolution channeling contrast microscopy of compositionally graded Si1-xGex layers., Nuclear Instruments & Methods in Physics Research, B:(2003), 210 483-488.

  10. Ahmed, M.; Garwan, M. A.; Al-Ohali, M. A.; Hamouz, Z.; Soufi, K.; Minqin, R.; Rajta, I.; Watt, F.. Proton microprobe analysis of water trees in underground high voltage cables., Nuclear Instruments & Methods in Physics Research, Section B210 (2003) 548-553.

  11. Teo, E. J.; Bettiol, A. A.; Udalagama, C. N. B.; Watt, F., Ionoluminescence and ion beam induced secondary electron imaging of cubic boron nitride. Nuclear Instruments & Methods in Physics Research, B210 (2003) 501-506.

2002

  1. Choi, W. K.; Pey, K. L.; Zhao, H. B.; Osipowicz, T.; Shen, Z. X., Nickel silicidation on polycrystalline silicon germanium films., International Journal of Modern Physics B:(2002), 16(28 & 29), 4323-4326.

  2. Leoy, C. C.; Choi, W. K.; Wong, K. L.; Wong, K. M.; Osipowicz, T.; Rong, J.,X-ray diffraction and Raman studies of RF sputtered polycrystalline silicon germanium films. International Journal of Modern Physics B:(2002), 16(28 & 29), 4263-4266.

  3. Loh, K. P.; Xie, X. N.; Lim, Y. H.; Teo, E. J.; Zheng, J. C.; Ando, T. Surface oxygenation studies on (1 0 0)-oriented diamond using an atom beam source and local anodic oxidation. Surface Science (2002), 505(1-3), 93-114.

  4. Choi, H. W.; Rana, M. A.; Chua, S. J.; Osipowicz, T.; Pan, J. S., Surface analysis of GaN decomposition. Semiconductor Science and Technology (2002), 17(12), 1223-1225.

  5. Huang, Q.; Tan, A. S.; Tan, J. M.; Goh, I. S.; Dong, Z. Z.; Ong, C. K.; Osipowicz, T., Effect of exposure to air on sheet resistance and phase composition of Co silicides annealed at a low temperature of 470 C., Applied Physics A: Materials Science & Processing (2003), 76(3), 439-443.

  6. Zhao, F. F.; Shen, Z. X.; Zheng, J. Z.; Gao, W. Z.; Osipowicz, T.; Pang, C. H.; Lee, P. S.; See, A. K., Thickness effect on nickel silicide formation and thermal stability for ultra shallow junction CMOS, Materials Research Society Symposium Proceedings (2002), 716(Silicon Materials--Processing, Characterization and Reliability), 41-46.

  7. Latt, K. M.; Park, H. S.; Seng, H. L.; Osipowicz, T.; Lee, Y. K., Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure. Journal of Materials Science (2002), 37(19), 4181-4188.

  8. Chew, K.; Rusli; Yoon, S. F.; Ahn, J.; Ligatchev, V.; Teo, E. J.; Osipowicz, T.; Watt, F. Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution., Journal of Applied Physics (2002), 92(5), 2937-2941.

  9. Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Osipowicz, T.; See, A.; Chan, L., Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized silicon., Journal of Applied Physics (2002), 92(3), 1344-1350.

  10. Latt, Khin Maung; Park, H. S.; Li, S.; Rong, Liu; Osipowicz, T.; Zhu, W. G.; Lee, Y. K., Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2., Journal of Materials Science (2002), 37(10), 1941-1949.

  11. Lee, P. S.; Pey, K. L.; Mangelinck, D.; Ding, J.; Chi, D. Z.; Osipowicz, T.; Dai, J. Y.; Chan, L., Effect of Ion Implantation on Layer Inversion of Ni Silicided Poly-Si., Journal of the Electrochemical Society (2002), 149(9), G505-G509.

  12. Ahn, J.; Gan, B.; Zhang, Q.; Rusli; Yoon, S. F.; Ligatchev, V.; Wang, S.-G.; Huang, Q.-F.; Chew, K.; Patran, A.-C.; Serban, A.; Liu, M.-H.; Lee, S.; Bettiol, A. A.; Osipowicz, T.; Watt, F., Characteristics of CVD diamond films in detecting UV, X-ray and alpha particle., International Journal of Modern Physics B: (2002), 16(6 & 7), 1018-1023.

  13. Loh, Kian Ping; Xie, X. N.; Zhang, X.; Teo, E. J.; Osipowicz, T.; Lai, M. Y.; Yakovlev, N., Deuterium-oxygen exchange on diamond (100) - a study by ERDA, RBS and TOF-SIMS. Diamond and Related Materials (2002), 11(7), 1385-1390.

  14. Huang, Q. F.; Yoon, S. F.; Rusli; Zhang, Q.; Ahn, J.; Teo, E. J.; Osipowicz, T.; Watt, F., Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD., Diamond and Related Materials (2002), 11(3-6), 1031-1035.

  15. Latt, Khin Maung; Lee, Y. K.; Osipowicz, T.; Park, H. S., Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2002), B94(1), 111-120.

  16. Wielunski, L. S.; Osipowicz, T.; Teo, E. J.; Watt, F.; Tok, E. S.; Zhang, J., Optimal geometry for GeSi/Si super-lattice structure RBS investigation, Nuclear Instruments & Methods in Physics Research, B190 (2002) 414-418.

  17. Teo, E. J.; Alkaisi, M.; Bettiol, A. A.; Osipowicz, T.; Van Kan, J.; Watt, F.; Markwitz, A., Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructures., Nuclear Instruments & Methods in Physics Research, B190 (2002) 339-344.

  18. Osipowicz, T.; Seng, H. L.; Wielunski, L. S.; Tok, E. S.; Breton, G.; Zhang, J., High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures., Nuclear Instruments & Methods in Physics Research, B190 (2002) 345-350.

  19. Seng, H. L.; Osipowicz, T.; Sum, T. C.; Tok, E. S.; Breton, G.; Woods, N. J.; Zhang, J., Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy., Applied Physics Letters (2002), 80(16), 2940-2942.

  20. Chew, K.; Rusli; Yoon, S. F.; Ahn, J.; Zhang, Q.; Ligatchev, V.; Teo, E. J.; Osipowicz, T.; Watt, F., Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopy., Journal of Applied Physics (2002), 91(7), 4319-4325

  21. Lee, P. S.; Pey, K. L.; Mangelinck, D.; Ding, J.; Osipowicz, T.; See, A., Layer inversion of Ni(Pt)Si on mixed phase Si films., Electrochemical and Solid-State Letters (2002), 5(3), G15-G17.

  22. Tan, W. L.; Pey, K. L.; Chooi, Simon Y. M.; Ye, J. H.; Osipowicz, T., Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide., Journal of Applied Physics (2002), 91(5), 2901-2909

  23. Latt, Khin Maung; Park, H. S.; Seng, H. L.; Osipowicz, T.; Lee, Y. K.; Li, S., Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multilayer structure., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2002), B90(1-2), 25-33.

  24. Lee, P. S.; Mangelinck, D.; Pey, K. L.; Ding, J.; Chi, D. Z.; Osipowicz, T.; Dai, J. Y.; See, A., Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack., Microelectronic Engineering (2002), 60(1-2), 171-181.

2001

  1. Rana, Mukhtar A.; Osipowicz, T.; Wielunski, L.; Watt, F.; Choi, A., Energy loss measurements in GaN single crystal grown on sapphire., Nuclear Science Journal (2001), 38(5), 301-306.

  2. Latt, Khin Maung; Lee, Y. K.; Seng, H. L.; Osipowicz, T., Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide. Journal of Materials Science (2001), 36(24), 5845-5851

  3. Latt, Khin Maung; Sher-Yi, C.; Osipowicz, T.; Lee, K.; Lee, Y. K., Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure., Journal of Materials Science (2001), 36(23), 5705-5712.

  4. Natarajan, A.; Bera, L. K.; Choi, W. K.; Osipowicz, T.; Seng, H. L., Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films., Solid-State Electronics (2001), 45(11), 1957-1961.

  5. Seng, H. L.; Osipowicz, T.; Lee, P. S.; Mangelinck, D.; Sum, T. C.; Watt, F., Micro-RBS study of nickel silicide formation., Nuclear Instruments & Methods in Physics Research, B181 (2001) 181 399-403.

  6. Osipowicz, T.; Zmeck, M.; Watt, F.; Fiege, G.; Balk, L.; Niedernostheide, F.; Schulze, H.-J., IBIC analysis of high-power devices., Nuclear Instruments & Methods in Physics Research, B181 (2001) 311-314.

  7. Teo, E. J.; Osipowicz, T.; Bettiol, A. A.; Watt, F.; Hao, M. S.; Chua, S. J., Channeling contrast microscopy on lateral epitaxial overgrown GaN., Nuclear Instruments & Methods in Physics Research, B181 (2001) 231-237

  8. Ho, Y. W.; Ng, V.; Choi, W. K.; Ng, S. P.; Osipowicz, T.; Seng, H. L.; Tjui, W. W.; Li, K., Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM., Scripta Materialia (2001), 44(8/9), 1291-1295.

  9. Latt, K. M.; Lee, Y. K.; Li, S.; Osipowicz, T.; Seng, H. L., The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2001), B84(3), 217-223

  10. Cui, J.; Rusli; Yoon, S. F.; Teo, E. J.; Yu, M. B.; Chew, K.; Ahn, J.; Zhang, Q.; Osipowicz, T.; Watt, F., Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide., Journal of Applied Physics (2001), 89(11, Pt. 1), 6153-6158.

  11. Latt, K. M.; Lee, K.; Osipowicz, T.; Lee, Y. K., Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2001), B83(1-3), 1-7.

  12. Rusli, H.; Yoon, S. F.; Huang, Q. F.; Ahn, J.; Zhang, Q.; Yang, H.; Wu, Y. S.; Teo, E. J.; Osipowicz, T.; Watt, F., Metal-containing amorphous carbon film development using electron cyclotron resonance CVD., Diamond and Related Materials (2001), 10(2), 132-138.

  13. Cui, J.; Rusli; Yoon, S. F.; Yu, M. B.; Chew, K.; Ahn, J.; Zhang, Q.; Teo, E. J.; Osipowicz, T.; Watt, F., Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition., Journal of Applied Physics (2001), 89(5), 2699-2705

  14. M. Zmeck, J. Phang, A. Bettiol, T. Osipowicz , F. Watt, L, Balk, F.J. Niedernostheide, H.J. Schulze, E. Falck, Analysis of High-Power Devices using Proton Beam Induced Charge Microscopy, Microelectronics Reliability 41: (Oct 2001) 1519

2000

    Lee, Y. K.; Latt, Khin Maung; Osipowicz, Thomas; Sher-Yi, Cham. ,Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure.,Materials Science in Semiconductor Processing (2000), 3(3), 191-194.
  1. Lee, Y. K.; Latt, Khin Maung; Jaehyung, Kim; Osipowicz, T.; Chiam, Sher-Yi; Lee, Kangsoo., Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2/Si structure, Journal of Materials Science (2000), 35(23), 5857-5860.

  2. Chong, Y. F.; Pey, K. L.; Lu, Y. F.; Wee, A. T. S.; Osipowicz, T.; Seng, H. L.; See, A.; Dai, J.-Y., Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions., Applied Physics Letters (2000), 77(19), 2994-2996.

  3. Lee, Y. K.; Latt, Khin Maung; JaeHyung, Kim; Osipowicz, Thomas; Sher-Yi, Chiam; Lee, Kangsoo., Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2000), B77(3), 282-287.

  4. Rusli; Yoon, S. F.; Huang, Q. F.; Yang, H.; Yu, M. B.; Ahn, J.; Zhang, Q.; Teo, E. J.; Osipowicz, T.; Watt, F., Investigation of molybdenum-carbon films (Mo-C:H) deposited using an electron cyclotron resonance chemical vapor deposition system., Journal of Applied Physics (2000), 88(6), 3699-3704.

  5. Lee, Y. K.; Maung Latt, K.; Li, S.; Osipowicz, T.; Chiam, S. Y., Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2., Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2000), B77(1), 101-105.

  6. Zmeck M, Osipowicz T, Watt F, Niedernostheide F, Schulze HJ, Fiege GBM, Balk L, Analysis of high-power devices using proton beam induced currents, Microelectronics Reliability 40 (2000) (8-10): 1413-1418

  7. Qing Zhang,U, S.F. Yoon, J. Ahna, Rusli, H. Yang, Bo Gan, Changyi Yang, F. Watt, E.J. Teo, T. Osipowice, Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic Heq irradiation and thermal annealing, Diamond and Related Materials 9 (2000) 1758-1761

  8. Rusli, S.F. Yoon, H. Yang, J. Ahn, Q.F. Huang, Q. Zhang, Y.P. Guo, C.Y. Yang, E.J Teo, A.T.S. Wee, A.C.H. Huan, F. Watt, Tungsten carbon thin films deposited using screen grid technique in an electron cyclotron resonance chemical vapour deposition system, Surface and Coatings Technology 123 (2000) 134-139

  9. K. P. Yap, H. Gong, J. Y. Dai, T. Osipowicz, L. H. Chan, and S. K. Lahirib, Integrity of Copper-Tantalum Nitride Metallization under Different Ambient Conditions, Journal of The Electrochemical Society, 147 (6) 2312-2318 (2000)

  10. B. Tomcik, T. Osipowicz and J.Y. Lee, Diamond-like films as a corrosion protection layer on the hard disk, Thin Solid Films 360 (Feb 2000) 173.

1999

  1. T Osipowicz, XY Zu, C Yang, W Z Zhou, C K Ong and F Watt, MicroPIXE and Channeling PIXE analysis of Ag doped Yba2Cu3O7-d thin films.,Nuclear Instruments and Methods B 150 (1999) 543-547

  2. Q Zhang, S F Yoon, J Ahn, H Yang, C Yang, F Watt, E J Teo, T Osipowicz., Effects of He irradiation on the structure of polymeric hydrogenated amorphous carbon.,Microelectronics Journal 30 (1999) 801-805

  3. Yang Changyi, Ee Jin Teo, Thomas Osipowicz, Frank Watt, David Jamieson, Kin Kiong Lee, and B.Tomcik., Hydrogen 3D distribution in solids by ERDA imaging,Nuclear Instruments and Methods B158 (1999) 706-712

  4. Yang Changyi, Andrew Bettiol, David Jamieson, Xiao Hua, J.C.H. Phang, D.S.H. Chan, Frank Watt, and T Osipowicz, IL and IBIC investigation of Light Emitting Diodes,Nuclear Instruments and Methods B158 (1999) 481-486.

  5. Rusli, S.F. Yoon, H. Yang, J. Ahna, Q.F. Huang, Q. Zhang, Y.P. Guo, C.Y. Yang, E.J. Teo, A.T.S. Wee, A.C.H Huan, Investigation of tungsten incorporated amorphous carbon,Thin Solid Films 355-356 (1999) 174-178

  6. S.F.Yoon, Rusli, J. Ahn, Q. Zhang, C.Y.Yang, H.Yang, F.Watt, Deposition of Polymeric Nitrogenated Amorphous Carbon Films (a-C:H:N) using electron cyclotron resonance CVD, Thin Solid Films, 340 (1999) 62-67.

  7. T Osipowicz, SY Chiam, F Watt, G Li and SJ Chua, Channeling contrast microscopy of GaN and InGaN thin films.,Nuclear Instruments and Methods B 158 (1999) 653-657

  8. Keran Zhang, Furong Zhou, C.H.A. Huan, A.T.S. Wee and Thomas Osipowicz, Indium doped zinc oxide films prepared by simultaneous r.f. and d.c. magnatron sputtering., Surface and Interface Analysis 28 (1999) 271-274

  9. Y.K. Lee, K Maung Latt, K JaeHyung, T. Osipowicz and K. Lee, Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2,Materials Science and Engineering B68 (1999) 99-103

1998

  1. Osipowicz, T.; Sanchez, J.L.; Orlic, I.; Watt, F.; Kolachina, S.; Chan, D.S.H.; Phang, J.C.H. Fluence dependence of IBIC collection efficiency of CMOS transistors,Nuclear Instruments & Methods in Physics Research, Section B 136-138 (1998) 1345

1997

  1. K Li, ATS Wee, J Lin, K K Lee, F Watt, K L Tan, Z C Feng and J B Webb, A surface and interface study on the InSb/GaAs heterostructures.,Thin Solid Films 302 (1997) 111-115.

  2. J L Sanchez, T Osipowicz, SM Tang, TS Tay, TT Win, Micro-PIXE analysis of trace element concentrations of natural rubies from different locations in Myanmar, Nucl Instr and Meths B130 (1997) 682-686

  3. Osipowicz, I Orlic, F Watt, S Kolachina, V K S Ong, D S H Chan, and J C H Phang. Recent results in Ion Beam Induced Charge microscopy: Unconnected junction contrast and an assessment of single contact IBIC.,Nucl Instr and Meths B130 (1997) 503-507

1996

  1. DSH Chan, JCH Phang, WS Lau, VKS Ong, VSane, S Kolachina, T Osipowicz and F Watt., New developments in beam induced current methods for the failure analysis of VLSI circuits., Microelectronic Engineering Vol 31 (1996) 57-67

  2. R Sandrik, M Jergel, V Strbik, K Nakamura, A Ishii, I Orlic, SM Tang, F Watt, Analysis of Stochiometry of Hi-Tc Superconductiong Films by RBS and PIXE Methods,Nucl. Instr. Meth. B118 (1996) 602-607

  3. S Prawer, D Jamieson, R J Walker, K K Lee, F Watt and R Kalish., Lattice substitution of phosphorous in diamond by MeV ion implantation and pulsed laser annealing., Diamond Films and Technology 6,6 (1996) 351-357

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