|
Publications :
Materials Characterization
2007
 |
Darmawan, P. Lee, P.S.;
Setiawan, Y.; Ma, J.;
Osipowicz, T.,
"Effect of low fluence laser annealing on ultrathin Lu2
O3 high- k dielectric"
Applied Physics
Letters, v 91, n 9, 2007, p 092903 |
|
|
Ho, Charles K.F.
Rajni; Djie, H.S.;
Pita, Kantisara; Ngo, Nam
Quoc; Osipowicz,T,
Optical and physical
properties of solgel-derived GeO2:SiO 2
films in photonic applications,
Applied Optics, v 46, n 20, Jul
10, 2007, p 4397-4406 |
|
|
Sreenivasan, M.G., Teo, K.L.;
Cheng, X.Z.; Jalil, M.B.A.;
Liew, T.; Chong, T.C.;
Du, A.Y.; Chan, T.K.;
Osipowicz, T.,Structural,
magnetic, and transport investigations of CrTe
clustering effect in (Zn,Cr)Te system,
Journal of
Applied Physics, v 102, n 5, 2007, p 053702 |
 |
H. L. Zhou, S. J.
Chua, H. Pan, Y. W. Zhu, T. Osipowicz, W. Liu, K. Y.
Zang, Y. P. Feng, and C. H. Sow, Morphology
Controllable ZnO Growth on Facet-Controlled Epitaxial
Lateral Overgrown GaN/Sapphire Templates,
J. Phys. Chem. C 2007, 111, 6405-6410 |
|
|
Hailong Zhou, Hui Pan, Taw
Kuei Chan, Chee Sheng Ho, Yanping Feng, Soo-Jin Chua and
Thomas Osipowicz, Channeling contrast
microscopy of epitaxial lateral overgrowth of ZnO/GaN
films,
Nuclear Instruments & Methods in
Physics Research B 260 (2007) 299-303 |
|
|
M.
Cholewa, H. O. Moser, Lie Huang, Shu Ping Lau,
Jinkyoung Yoo, Sung Jin An, Gyu-Chul Yi, Gao Xingyu, A.
T. S. Wee, A. Bettiol, F. Watt, B. Fischer
“Secondary electron emission properties of III-nitride/ZnO
coaxial heterostructures under ion and X-ray
bombardment”, Nuclear Instruments & Methods in
Physics Research B 254 (2007) 55-58 |
2006
|
|
T.D.M. Weijers-Dall, H.
Timmers, K. Stenstrom, P. Persson, A. Pergjegjaj, X.
Wang, M. Graczyk, T. Osipowicz, M.Q. Ren, D.J. O’Connor,
H.J. Whitlow,
Measurements
of the stopping forces for heavy ions in Ge, Ag and Au
using novel 'polka-dot' detectors,
Nuclear Instruments and Methods in Physics Research,
Section B251 (2006) 352-360 |
| |
S.L. Liew, B. Balakrisnan, S.Y. Chow, M.Y. Lai, W.D.
Wang, K.Y. Lee, C.S. Ho, T. Osipowicz and D.Z. Chi,
Growth of high quality Er-Ge films on Ge(001)
substrates by suppressing oxygen contamination during
germanidation annealing, Thin Solid Films 504
(2006) 81-85 |
| |
Li HL, Wu YH, Liu T, Wang SJ,
Guo ZB, Osipowicz T, Magnetic and transport
properties of Ge: Mn granular system, Thin Solid
Films 505 (2006) 54-56 |
|
|
Ahmed A, Al-Ohali M, Garwan
M, Al-Hamouz Z, Al-Soufi K, Minqin R, Rajta I, Watt F,
A systematic approach to nuclear microscopy of water
trees for a large number of field-aged HV cable samples
European Transactions on Electrical Power 16 (2006)
49-62 |
2005
| |
Zhang QC, Wu N, Osipowicz T,
Bera LK, Zhu CX, Formation and thermal stability of
nickel germanide on germanium substrate, JAPANESE
JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS
LETTERS 44 (2005) L1389-L1391
|
| |
Rahman MA, Osipowicz T, Chi
DZ, Wang WD, Observation of a new kinetics to form
Ni3Si2 and Ni31Si12 silicides at low temperature (200
degrees C), JOURNAL OF THE ELECTROCHEMICAL
SOCIETY 152 (2005) G900-G902
|
| |
Rahman MA, Osipowicz T, Pey
KL, Jin LJ, Choi WK, Chi DZ, Antoniadis DA, Fitzgerald
EA, Isaacson DM, Suppression of oxidation in nickel
germanosilicides by Pt incorporation APPLIED
PHYSICS LETTERS 87 (2005) 82116-82116
|
| |
Jin LJ, Pey KL, Choi WK,
Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ,
Rahman MA, Osipowicz T, Tung CH, Effect of Pt on
agglomeration and Ge out diffusion in Ni(Pt)
germanosilicide, JOURNAL OF APPLIED PHYSICS 98
(2005) 33520-33520
|
| |
Seng HL, Osipowicz T, Zhang
J, Tok ES, Observation of local lattice tilts in
strain-relaxed Si1-xGex using high resolution channeling
contrast microscopy
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81
(2005) 1163-1166
|
| |
Zhu YQ, Kang ET, Neoh KG,
Osipowicz T, Chan L, Plasma graft copolymerization of
4-vinylpyridine on dense and porous SiLK for electroless
plating of copper and for retardation of copper
diffusion, JOURNAL OF THE ELECTROCHEMICAL SOCIETY
152 (2005): F107-F114
|
| |
Anisur MR, Osipowicz T, Chi
DZ, Wang WD, Effects of prolonged annealing on NiSi
at low temperature (500 degrees C), JOURNAL OF
ELECTRONIC MATERIALS 34 (2005) 1110-1114
|
| |
Lee PS, Pey KL, Mangelinck
D, Chi DZ, Osipowicz T, On the morphological changes
of Ni- and Ni(Pt)-silicides , JOURNAL OF THE
ELECTROCHEMICAL SOCIETY 152 (2005) G305-G308 |
| |
L. Huang, M.B.H. Breese, E.J. Teo, Characterisation
of 60 misfit dislocations in SiGe
alloy using nuclear microscopy, Nuclear
Instruments and Methods in Physics Research B 231 (2005) 452–456 |
| |
H.L. Seng, T. Osipowicz, J. Zhang b, E.S. Tok,
F. Watt, Determination of local lattice tilt in Si1 xGex virtual
substrate using high resolution channeling contrast microscopy, Nuclear
Instruments and Methods in Physics Research B 231 (2005) 446–451 |
2004
| |
Zmeck, M.;
Balk, L. J.; Osipowicz, T.; Watt, F.; Phang, J. C. H.; Khambadkone, A.
M.; Niedernostheide, F.-J.; Schulze, H.-J., Ion beam induced charge
microscopy studies of power diodes., Journal of Physics:
Condensed Matter (2004), 16(2), S57-S66. |
| |
Seng, H. L.; Breese,
M. B. H.; Watt, F.; Kummer, M.; von Kanel, H.,Characterization of
thick graded Si1-xGex/Si layers grown by low energy plasma enhanced
chemical vapour deposition, Nuclear Instruments & Methods
in Physics Research, B (2004), 215(1-2), 235-239.
|
| |
Chong, K. B.; Kong, L.
B.; Chen, Linfeng; Yan, L.; Tan, C. Y.; Yang, T.; Ong, C. K.;
Osipowicz, T., Improvement of dielectric loss tangent of Al2O3 doped
Ba0.5Sr0.5TiO3 thin films for tunable microwave devices, Journal
of Applied Physics (2004), 95(3), 1416-1419. |
| |
Zhao, F. F.; Zheng, J.
Z.; Shen, Z. X.; Osipowicz, T.; Gao, W. Z.; Chan, L. H., Thermal
stability study of NiSi and NiSi2 thin films, Microelectronic
Engineering (2004), 71(1), 104-111. |
| |
Christian M. Leewis, Peter H. A.
Mutsaers, Arthur M. de Jong, Leo J. van IJzendoorn, Martien J. A. de
Voigt, Min
Q. Ren, Frank Watt and Dirk J. Broer, The mutual diffusion
coefficient
for meth…acrylate monomers as determined with a nuclear microprobe,
Journal of Chemical Physics 120 (2004) |
| |
E. J. Teo, A.A. Bettiol, T.
Osipowicz, M. Hao, S.J. Chua and Y.Y. Liu, “Depth-resolved luminescence
imaging of epitaxial lateral overgrown GaN using ionoluminescence”, Journal
of Crystal Growth 268 (2004) 494-498 |
| |
Yan,
L. ; Kong, L.B.; Yang,
T.; Goh, W.C.; Tan, C.Y.; Ong, C.K.; Rahman, Md.A.; Osipowicz,
T.; Ren, M.Q. Enhanced low field magnetoresistance
of Al2O3-La0.7Sr0.3MnO3
composite thin films via a pulsed laser deposition, Journal of
Applied
Physics, Volume 96, Issue 3, 2004,
Pages 1568-1571 |
| |
Chen, C. ; Teo, K.L.; Chong,
T.C.; Wu, Y.H.; Osipowicz, T.; Rahman, M.A . Epitaxial growth of co-doped
Eu and Sm in -Zn0.05Sr0.95S on (001)MgO
substrate
using -MnS buffer layer, Journal of Crystal Growth, Volume
264, Issue 1-3, 2004, Pages 58-63
|
| |
Pey,
K.L. ;
Chattopadhyay, S.; Choi, W.K.; Miron, Y.; Fitzgerald, E.A.; Antoniadis,
D.A.; Osipowicz, T., Stability
and composition of Ni-germanosilicided Si1-xGex
films,
Journal of Vacuum Science & Technology B (Microelectronics and
Nanometer
Structures), Volume 22, Issue 2, 2004, Pages
852-858 |
| |
Rana, M.A., Breese,
M.B.H.; Osipowicz, T. A Monte Carlo
simulation study of channelling and dechannelling enhancement due to
lattice translations, Nuclear Instruments and Methods in
Physics Research, B: 222, n 1-2, July, 2004, p 53-60 |
| |
Song,
W.D., Hong, M.H.;
Osipowicz,
T.; Dai, D.Y.;
Pang, S.I.; Peng,
Y.Z.; Chong, J.F.;
An, C.W.; Liew,
Y.F.; Chong, T.C. , Laser synthesis of
new materials, Applied
Physics A: Materials Science and Processing, v 79, 2004, Laser
Ablation, p 1349-1352 |
| |
Nakajima,
K., Joumori, S.;
Suzuki, M.; Kimura,
K.; Osipowicz, T.; Tok,
K.L.; Zheng, J.Z.;
See, A.; Zhang,
B.C. Characterization of HfO2/Si(0 0 1) interface with
high-resolution rutherford backscattering spectroscopy, Applied
Surface Science, v 237, n 1-4, Oct 15, 2004, p 416-420 |
| |
P. J.
Sellin, A. Lohstroh, A. Simon and M. B. H. Breese, Digital IBIC—new spectroscopic modalities for
ion-beam-induced charge imaging, Nuclear Instruments
and Methods in Physics Research A 521 (2004) 600-607 |
| |
Yan,
L. Chen, L.F.;
Tan, C.Y.; Ong,
C.K.; Rahman, Md. Anisur; Osipowicz,
T. Ba0.1Sr0.9TiO3-BaTi4O
9 composite thin films with improved
microwave dielectric properties, European
Physical Journal B, v 41, n 2, September, 2004, p 201-205 |
| |
Seah, M.P.
Spencer,
S.J.; Bensebaa, F.; Vickridge,
I.; Danzebrink, H.; Krumrey,
M.; Gross, T.;
Oesterle,
W.; Wendler, E.;
Rheinlander,
B.; Azuma, Y.;
Kojima, I.; Suzuki,
N.; Suzuki, M.;
Tanuma, S.; Moon,
D.W.; Lee, H.J.;
Cho, Hyun
Mo; Chen, H.Y.;
Wee, A.T.S.; Osipowicz,
T.; Pan, J.S.;
Jordaan,
W.A.; Hauert, R.;
Klotz, U.; Van
Der Marel, C.; Verheijen, M.; Tamminga,
Y.; Jeynes, C.;
Bailey, P.; Biswas,
S.; Falke, U.;
Nguyen,
N.V.; Chandler-Horowitz, D.; Ehrstein,
J.R.; Muller, D.;
Dura, J.A.
Critical review of
the current status of thickness measurements for ultrathin SiO2
on Si Part V: Results of a CCQM pilot study, Surface and Interface Analysis, v 36, n 9,
September, 2004, p 1269-1303 |
2003
| |
Zmeck, M.; Balk, L.;
Osipowicz, T.; Watt, F.; Phang, J.; Khambadkone, A.; Niedernostheide,
F.-J.; Schulze, H.-J., Modeling of deep buried structures in
high-power devices
based on proton beam induced charge microscopy., Nuclear
Instruments & Methods in Physics Research B210 (2003)
164-168. |
| |
Rana, M. A.;
Osipowicz, T.; Choi, H. W.; Breese, M. B. H.; Chua, S. J., A study
of the material loss and other processes involved during annealing of
GaN at growth
temperatures, Chemical Physics Letters (2003),
380(1,2), 105-110. |
| |
Osipowicz, T.; Teo, E.
J.; Bettiol, A. A.; Watt, F.; Hao, M. S.; Chua, S. J., 2 MeV proton
channeling contrast microscopy of lateral epitaxial overgrowth GaN thin
film structures., Thin Solid Films (2003),
424(1), 139-142. |
| |
Teo, E. J.; Bettiol,
A. A.; Osipowicz, T.; Hao, M. S.; Chua, S. J.; Liu, Y. Y., Yellow
luminescence imaging of epitaxial lateral overgrown GaN using
ionoluminescence., Materials Research Society Symposium
Proceedings (2003), 738(Spatially Resolved Characterization
of Local Phenomena in Materials and Nanostructures), 85-90. |
| |
Rana, M. A.;
Osipowicz, T.; Choi, H. W.; Breese, M. B. H.; Watt, F.; Chua, S. J. Stoichiometric
and structural alterations in GaN thin films during annealling. Applied
Physics A: Materials Science & Processing (2003),
77(1), 103-108. |
| |
Choi, H. W.; Cheong,
M. G.; Rana, M. A.; Chua, S. J.; Osipowicz, T.; Pan, J. S.
Rutherford backscattering analysis of GaN decomposition. Journal
of Vacuum Science & Technology, B: (2003), 21(3),
1080-1083. |
| |
Rana, M. A.; Choi,
H. W.; Breese, M. B. H.; Osipowicz, T.; Chua, S. J.; Watt, F. A
study of the decomposition of GaN during annealing over a wide range of
temperatures. Materials Research Society Symposium
Proceedings (2003), 743(GaN and Related
Alloys--2002), 731-736. |
| |
Nakajima, K.; Joumori,
S.; Suzuki, M.; Kimura, K.; Osipowicz, T.; Tok, K. L.; Zheng, J. Z.;
See, A.; Zhang, B. C., Strain profiling of HfO2/Si(001) interface
with high-resolution Rutherford backscattering spectroscopy. Applied
Physics Letters (2003), 83(2), 296-298. |
| |
Seng, H. L.;
Osipowicz, T.; Sum, T. C.; Breese, M. B. H.; Watt, F.; Tok, E. S.;
Zhang, J., High-resolution channeling contrast microscopy of
compositionally graded Si1-xGex layers., Nuclear Instruments
& Methods in Physics Research, B:(2003), 210
483-488. |
| |
Ahmed, M.; Garwan,
M. A.; Al-Ohali, M. A.; Hamouz, Z.; Soufi, K.; Minqin, R.; Rajta, I.;
Watt, F.. Proton microprobe
analysis of water trees in underground high voltage cables.,
Nuclear
Instruments & Methods in Physics Research, Section B210 (2003)
548-553. |
| |
Teo, E. J.; Bettiol,
A. A.; Udalagama, C. N. B.; Watt, F., Ionoluminescence and ion beam
induced secondary electron imaging of cubic boron nitride. Nuclear
Instruments & Methods in Physics Research, B210 (2003)
501-506. |
2002
| |
Choi, W. K.; Pey, K.
L.; Zhao, H. B.; Osipowicz, T.; Shen, Z. X., Nickel silicidation on
polycrystalline silicon germanium films., International Journal
of Modern Physics B:(2002), 16(28 & 29), 4323-4326. |
| |
Leoy, C. C.; Choi, W.
K.; Wong, K. L.; Wong, K. M.; Osipowicz, T.; Rong, J.,X-ray
diffraction and Raman studies of RF sputtered polycrystalline silicon
germanium films. International Journal of Modern Physics
B:(2002), 16(28 & 29), 4263-4266. |
| |
Loh, K. P.; Xie, X.
N.;
Lim, Y. H.; Teo, E. J.; Zheng, J. C.; Ando, T. Surface oxygenation
studies
on (1 0 0)-oriented diamond using an atom beam source and local anodic
oxidation. Surface Science (2002), 505(1-3),
93-114. |
| |
Choi, H. W.; Rana, M.
A.; Chua, S. J.; Osipowicz, T.; Pan, J. S., Surface analysis of GaN
decomposition. Semiconductor Science and Technology
(2002), 17(12), 1223-1225. |
| |
Huang, Q.; Tan, A. S.;
Tan, J. M.; Goh, I. S.; Dong, Z. Z.; Ong, C. K.; Osipowicz, T., Effect
of exposure to air on sheet resistance and phase composition of Co
silicides annealed at a low temperature of 470 C., Applied
Physics A: Materials Science & Processing (2003),
76(3), 439-443. |
| |
Zhao, F. F.; Shen, Z.
X.; Zheng, J. Z.; Gao, W. Z.; Osipowicz, T.; Pang, C. H.; Lee, P. S.;
See, A. K., Thickness effect on nickel silicide formation and
thermal stability for ultra shallow junction CMOS, Materials
Research Society Symposium Proceedings (2002), 716(Silicon
Materials--Processing, Characterization and Reliability),
41-46. |
| |
Latt, K. M.; Park, H.
S.; Seng, H. L.; Osipowicz, T.; Lee, Y. K., Study on SiNx passivated
Cu/Ta/SiO2/Si multilayer structure. Journal of Materials
Science (2002), 37(19), 4181-4188. |
| |
Chew, K.; Rusli; Yoon,
S. F.; Ahn, J.; Ligatchev, V.; Teo, E. J.; Osipowicz, T.; Watt,
F. Hydrogenated amorphous silicon carbide deposition using
electron cyclotron resonance chemical vapor deposition under high
microwave power and strong hydrogen dilution., Journal of
Applied Physics (2002), 92(5), 2937-2941. |
| |
Chong, Y. F.; Pey, K.
L.; Wee, A. T. S.; Osipowicz, T.; See, A.; Chan, L., Control of
transient enhanced diffusion of boron after
laser thermal processing of preamorphized silicon., Journal of
Applied Physics (2002), 92(3), 1344-1350. |
| |
Latt, Khin Maung;
Park, H. S.; Li, S.; Rong, Liu; Osipowicz, T.; Zhu, W. G.; Lee, Y. K., Behaviour
of ionized metal plasma deposited Ta diffusion barrier between Cu and
SiO2., Journal of Materials Science (2002),
37(10), 1941-1949. |
| |
Lee, P. S.; Pey, K.
L.; Mangelinck, D.; Ding, J.; Chi, D. Z.; Osipowicz, T.; Dai, J. Y.;
Chan, L., Effect of Ion Implantation on Layer Inversion of Ni
Silicided Poly-Si., Journal of the Electrochemical
Society (2002), 149(9), G505-G509. |
| |
Ahn, J.; Gan, B.;
Zhang, Q.; Rusli; Yoon, S. F.; Ligatchev, V.; Wang, S.-G.; Huang,
Q.-F.; Chew, K.; Patran, A.-C.; Serban, A.; Liu, M.-H.; Lee, S.;
Bettiol, A. A.; Osipowicz, T.; Watt, F., Characteristics of CVD
diamond films in detecting UV, X-ray and alpha particle., International
Journal of Modern Physics B: (2002), 16(6 & 7),
1018-1023. |
| |
Loh, Kian Ping; Xie,
X.
N.; Zhang, X.; Teo, E. J.; Osipowicz, T.; Lai, M. Y.; Yakovlev, N., Deuterium-oxygen
exchange on diamond (100) - a study by ERDA, RBS and TOF-SIMS. Diamond
and Related Materials (2002), 11(7), 1385-1390. |
| |
Huang, Q. F.; Yoon, S.
F.; Rusli; Zhang, Q.; Ahn, J.; Teo, E. J.; Osipowicz, T.; Watt, F.,
Characteristics of nickel-containing carbon films deposited using
electron cyclotron resonance CVD., Diamond and Related
Materials (2002), 11(3-6), 1031-1035. |
| |
Latt, Khin Maung; Lee,
Y. K.; Osipowicz, T.; Park, H. S., Interfacial reactions and failure
mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing., Materials
Science & Engineering, B: Solid-State Materials for Advanced
Technology (2002), B94(1), 111-120. |
| |
Wielunski, L. S.;
Osipowicz, T.; Teo, E. J.; Watt, F.; Tok, E. S.; Zhang, J., Optimal
geometry for GeSi/Si super-lattice structure RBS investigation, Nuclear
Instruments & Methods in Physics Research, B190 (2002)
414-418. |
| |
Teo, E. J.; Alkaisi,
M.; Bettiol, A. A.; Osipowicz, T.; Van Kan, J.; Watt, F.; Markwitz, A.,
Sub-micron channeling contrast microscopy on reactive ion etched deep
Si microstructures., Nuclear Instruments & Methods in
Physics Research, B190 (2002) 339-344. |
| |
Osipowicz, T.; Seng,
H. L.; Wielunski, L. S.; Tok, E. S.; Breton, G.; Zhang, J., High
resolution channeling contrast microscopy and channeling analysis of
SiGe quantum well structures., Nuclear Instruments &
Methods in Physics Research, B190 (2002) 345-350. |
| |
Seng, H. L.;
Osipowicz, T.; Sum, T. C.; Tok, E. S.; Breton, G.; Woods, N. J.; Zhang,
J., Probing the SiGe virtual substrate by high-resolution
channeling contrast microscopy., Applied Physics Letters
(2002), 80(16), 2940-2942. |
| |
Chew, K.; Rusli; Yoon,
S. F.; Ahn, J.; Zhang, Q.; Ligatchev, V.; Teo, E. J.; Osipowicz, T.;
Watt, F., Gap state distribution in amorphous hydrogenated silicon
carbide films deduced from photothermal deflection spectroscopy., Journal
of Applied Physics (2002), 91(7), 4319-4325 |
| |
Lee, P. S.; Pey, K.
L.; Mangelinck, D.; Ding, J.; Osipowicz, T.; See, A., Layer
inversion of Ni(Pt)Si on mixed phase Si films., Electrochemical
and Solid-State Letters (2002), 5(3), G15-G17. |
| |
Tan, W. L.; Pey, K.
L.; Chooi, Simon Y. M.; Ye, J. H.; Osipowicz, T., Effect of a
titanium cap in reducing interfacial oxides in the formation of nickel
silicide., Journal of Applied Physics (2002),
91(5), 2901-2909 |
| |
Latt, Khin Maung;
Park, H. S.; Seng, H. L.; Osipowicz, T.; Lee, Y. K.; Li, S., Effect
of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si
multilayer structure., Materials Science & Engineering, B:
Solid-State Materials for Advanced Technology (2002),
B90(1-2), 25-33. |
| |
Lee, P. S.;
Mangelinck, D.; Pey, K. L.; Ding, J.; Chi, D. Z.; Osipowicz, T.; Dai,
J. Y.; See, A., Enhanced stability of Ni monosilicide on MOSFETs
poly-Si gate stack., Microelectronic Engineering
(2002), 60(1-2), 171-181. |
2001
| |
Rana, Mukhtar A.;
Osipowicz, T.; Wielunski, L.; Watt, F.; Choi, A., Energy loss
measurements in GaN single crystal grown on sapphire., Nuclear
Science Journal (2001), 38(5), 301-306. |
| |
Latt, Khin Maung; Lee,
Y. K.; Seng, H. L.; Osipowicz, T., Diffusion barrier properties of
ionized metal plasma deposited tantalum nitride thin films between
copper and silicon dioxide. Journal of Materials Science
(2001), 36(24), 5845-5851 |
| |
Latt, Khin Maung;
Sher-Yi, C.; Osipowicz, T.; Lee, K.; Lee, Y. K., Comparative study
of copper films prepared by ionized metal plasma sputtering and
chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure., Journal
of Materials Science (2001), 36(23), 5705-5712. |
| |
Natarajan, A.; Bera,
L. K.; Choi, W. K.; Osipowicz, T.; Seng, H. L., Rapid thermal
oxidation of radio frequency sputtered polycrystalline Si1-xGex thin
films., Solid-State Electronics (2001),
45(11), 1957-1961. |
| |
Seng, H. L.;
Osipowicz, T.; Lee, P. S.; Mangelinck, D.; Sum, T. C.; Watt, F., Micro-RBS
study of nickel silicide formation., Nuclear Instruments &
Methods in Physics Research, B181 (2001) 181 399-403.
|
| |
Osipowicz, T.; Zmeck,
M.; Watt, F.; Fiege, G.; Balk, L.; Niedernostheide, F.; Schulze, H.-J.,
IBIC analysis of high-power devices., Nuclear
Instruments & Methods in Physics Research, B181 (2001)
311-314. |
| |
Teo, E. J.; Osipowicz,
T.; Bettiol, A. A.; Watt, F.; Hao, M. S.; Chua, S. J., Channeling
contrast microscopy on lateral epitaxial overgrown GaN., Nuclear
Instruments & Methods in Physics Research, B181 (2001) 231-237 |
| |
Ho, Y. W.; Ng, V.;
Choi, W. K.; Ng, S. P.; Osipowicz, T.; Seng, H. L.; Tjui, W. W.; Li,
K., Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2
system using raman spectroscopy, RBS and TEM., Scripta
Materialia (2001), 44(8/9), 1291-1295. |
| |
Latt, K. M.; Lee, Y.
K.; Li, S.; Osipowicz, T.; Seng, H. L., The impact of layer
thickness of IMP-deposited tantalum nitride films on integrity of
Cu/TaN/SiO2/Si multilayer structure., Materials Science &
Engineering, B: Solid-State Materials for Advanced Technology
(2001), B84(3), 217-223 |
| |
Cui, J.; Rusli; Yoon,
S. F.; Teo, E. J.; Yu, M. B.; Chew, K.; Ahn, J.; Zhang, Q.; Osipowicz,
T.; Watt, F., Effect of radio-frequency bias voltage on the optical
and structural properties of hydrogenated amorphous silicon carbide., Journal
of Applied Physics (2001), 89(11, Pt. 1),
6153-6158. |
| |
Latt, K. M.; Lee, K.;
Osipowicz, T.; Lee, Y. K., Properties of electroplated copper thin film
and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si
multilayer structure., Materials Science & Engineering, B:
Solid-State Materials for Advanced Technology (2001),
B83(1-3), 1-7. |
| |
Rusli, H.; Yoon, S.
F.; Huang, Q. F.; Ahn, J.; Zhang, Q.; Yang, H.; Wu, Y. S.; Teo, E. J.;
Osipowicz, T.; Watt, F., Metal-containing amorphous carbon film
development using electron cyclotron resonance CVD., Diamond
and Related Materials (2001), 10(2), 132-138. |
| |
Cui, J.; Rusli; Yoon,
S. F.; Yu, M. B.; Chew, K.; Ahn, J.; Zhang, Q.; Teo, E. J.; Osipowicz,
T.; Watt, F., Effects of microwave power on the structural and
emission properties of hydrogenated amorphous silicon carbide deposited
by electron cyclotron resonance chemical vapor deposition., Journal
of Applied Physics (2001), 89(5), 2699-2705 |
| |
M. Zmeck, J. Phang, A. Bettiol, T.
Osipowicz , F. Watt, L, Balk, F.J. Niedernostheide, H.J. Schulze, E.
Falck, Analysis of High-Power Devices using Proton Beam Induced
Charge Microscopy, Microelectronics Reliability 41: (Oct 2001)
1519 |
2000
| |
Lee, Y. K.; Latt, Khin
Maung; Osipowicz, Thomas; Sher-Yi, Cham. ,Study of diffusion barrier
properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film
structure., Materials Science in Semiconductor Processing
(2000), 3(3), 191-194. |
| |
Lee, Y. K.; Latt, Khin
Maung; Jaehyung, Kim; Osipowicz, T.; Chiam, Sher-Yi; Lee, Kangsoo.,
Study of interfacial reactions in ionized metal plasma (IMP) deposited
Al-0.5%wt Cu/Ti/SiO2/Si structure, Journal of Materials
Science (2000), 35(23), 5857-5860. |
| |
Chong, Y. F.; Pey, K.
L.; Lu, Y. F.; Wee, A. T. S.; Osipowicz, T.; Seng, H. L.; See, A.; Dai,
J.-Y., Liquid-phase epitaxial growth of amorphous silicon during
laser annealing of ultrashallow p+/n junctions., Applied
Physics Letters (2000), 77(19), 2994-2996. |
| |
Lee, Y. K.; Latt, Khin
Maung; JaeHyung, Kim; Osipowicz, Thomas; Sher-Yi, Chiam; Lee, Kangsoo.,
Comparative analysis and study of ionized metal plasma (IMP)-Cu and
chemical vapor deposition (CVD)-Cu on diffusion barrier properties of
IMP-TaN on SiO2., Materials Science &
Engineering, B: Solid-State Materials for Advanced Technology
(2000),
B77(3), 282-287. |
| |
Rusli; Yoon, S. F.;
Huang, Q. F.; Yang, H.; Yu, M. B.; Ahn, J.; Zhang, Q.; Teo, E. J.;
Osipowicz, T.; Watt, F., Investigation of molybdenum-carbon films
(Mo-C:H) deposited using an electron cyclotron resonance chemical vapor
deposition system., Journal of Applied Physics
(2000), 88(6), 3699-3704. |
| |
Lee, Y. K.; Maung
Latt, K.; Li, S.; Osipowicz, T.; Chiam, S. Y., Characterization of
interfacial reactions between ionized metal plasma deposited Al-0.5
wt.% Cu and Ti on SiO2., Materials Science & Engineering,
B: Solid-State Materials for Advanced Technology (2000),
B77(1), 101-105. |
| |
Zmeck M, Osipowicz T, Watt F,
Niedernostheide F, Schulze HJ, Fiege GBM, Balk L, Analysis of
high-power devices using proton beam induced currents, Microelectronics
Reliability 40 (2000) (8-10): 1413-1418 |
| |
Qing Zhang,U, S.F. Yoon, J. Ahna,
Rusli, H. Yang, Bo Gan, Changyi Yang, F. Watt, E.J. Teo, T. Osipowice, Structural
modification of polymeric amorphous hydrogenated carbon films induced
by
high energetic Heq irradiation and thermal annealing, Diamond
and
Related Materials 9 (2000) 1758-1761 |
| |
Rusli, S.F. Yoon, H. Yang, J. Ahn,
Q.F. Huang, Q. Zhang, Y.P. Guo, C.Y. Yang, E.J Teo, A.T.S. Wee,
A.C.H.
Huan, F. Watt, Tungsten–carbon thin films deposited using screen
grid
technique in an electron cyclotron resonance chemical vapour deposition
system, Surface and Coatings Technology 123 (2000)
134–139 |
1999
| |
T Osipowicz,
XY Zu, C Yang, W Z Zhou, C K Ong and F Watt, MicroPIXE and
Channeling PIXE analysis of Ag doped Yba2Cu3O7-d thin films., Nuclear
Instruments and Methods B 150 (1999) 543 – 547. |
| |
Q Zhang, S F
Yoon, J Ahn, H Yang, C Yang, F Watt, E J Teo, T Osipowicz., Effects
of
He irradiation on the structure of polymeric hydrogenated amorphous
carbon., Microelectronics Journal 30 (1999) 801 – 805. |
| |
Yang Changyi,
Ee Jin Teo, Thomas Osipowicz, Frank Watt, David Jamieson, Kin Kiong
Lee, and B.Tomcik., Hydrogen 3D distribution in solids by ERDA
imaging, Nuclear Instruments and Methods B158 (1999)
706-712. |
| |
Yang Changyi,
Andrew Bettiol, David Jamieson, Xiao Hua, J.C.H. Phang, D.S.H. Chan,
Frank Watt, and T Osipowicz, IL and
IBIC investigation of Light Emitting Diodes, Nuclear
Instruments and Methods B158 (1999) 481-486. |
| |
Rusli, S.F. Yoon, H. Yang, J.
Ahna,
Q.F. Huang, Q. Zhang, Y.P. Guo, C.Y. Yang, E.J. Teo, A.T.S. Wee, A.C.H
Huan, Investigation of tungsten incorporated amorphous carbon,
Thin Solid Films 355-356 (1999) 174-178 |
| |
S.F.Yoon,
Rusli, J. Ahn, Q. Zhang, C.Y.Yang, H.Yang, F.Watt, Deposition
of Polymeric Nitrogenated Amorphous Carbon Films (a-C:H:N) using
electron cyclotron resonance CVD, Thin Solid Films, 340 (1999)
62-67. |
| |
T Osipowicz,
SY Chiam, F Watt, G Li and SJ Chua, Channeling contrast microscopy
of GaN and InGaN thin films., Nuclear Instruments and Methods B
158 (1999) 653-657. |
| |
Keran Zhang,
Furong Zhou, C.H.A. Huan, A.T.S. Wee and Thomas Osipowicz, Indium
doped zinc oxide films prepared by simultaneous r.f. and d.c. magnatron
sputtering., Surface and Interface Analysis 28 (1999) 271-274 |
| |
Y.K. Lee, K
Maung Latt, K JaeHyung, T. Osipowicz and K. Lee, Study of diffusion
barrier properties of ionized metal plasma (IMP) deposited tantalum
(Ta) between Cu and SiO2, Materials Science and
Engineering B68 (1999) 99-103. |
1998
| |
Osipowicz,
T.; Sanchez, J.L.; Orlic, I.; Watt, F.; Kolachina, S.;
Chan, D.S.H.; Phang, J.C.H. Fluence dependence of IBIC
collection efficiency of CMOS transistors, Nuclear Instruments
&
Methods in Physics Research, Section B 136-138 (1998) 1345 |
1997
| |
K Li, ATS
Wee, J Lin, K K Lee, F Watt, K L Tan, Z C Feng and J B Webb, A
surface and interface study on the InSb/GaAs heterostructures., Thin
Solid Films 302 (1997) 111-115. |
| |
J L Sanchez,
T Osipowicz, SM Tang, TS Tay, TT Win, Micro-PIXE analysis of trace
element concentrations of natural rubies from different locations
in Myanmar, Nucl Instr and Meths B130 (1997) 682-686 |
| |
Osipowicz,
I Orlic, F Watt, S Kolachina, V K S Ong, D S H Chan, and J C H Phang. Recent
results in Ion Beam Induced Charge microscopy: Unconnected junction
contrast and an
assessment of single contact IBIC., Nucl Instr and
Meths B130 (1997) 503-507. |
1996
| |
DSH Chan, JCH
Phang, WS Lau, VKS Ong, VSane, S Kolachina, T
Osipowicz and F Watt., New developments in beam induced current
methods for the failure analysis of VLSI circuits., Microelectronic
Engineering Vol 31 (1996) 57-67. |
| |
R Sandrik, M
Jergel, V Strbik, K Nakamura, A Ishii, I Orlic, SM Tang, F Watt, Analysis
of Stochiometry of Hi-Tc Superconductiong Films by RBS and PIXE
Methods, Nucl. Instr. Meth. B118 (1996) 602-607. |
| |
S Prawer, D
Jamieson, R J Walker, K K Lee, F Watt and R Kalish., Lattice
substitution of phosphorous in diamond by MeV ion implantation and
pulsed laser annealing., Diamond Films and Technology 6,6
(1996) 351-357. |
|
